Helical edge resistance introduced by charge disorder
Leonid Glazman
Yale University
Friday, 21 March 2014, 10:15
Lecture Hall F, K404
Abstract:
Electron puddles created by doping of a 2D topological insulator may
violate the ideal helical edge conductance. Because of a long electron
dwelling time, even a single puddle may lead to a significant inelastic
backscattering. We find the resulting correction to the perfect edge
conductance. Generalizing to multiple puddles, we assess the dependence of
the helical edge resistance on temperature and on the doping level. Puddles
with odd electron number carry a spin and lead to a logarithmically-weak
temperature dependence of the resistivity of a long edge.