Capacitance voltage characteristics, a way to determine the doping profiles in wrap-gated nanowire transitors
Friday, 1 February 2008, 10:15
A wrap-gated doped nanowire structure is studied by implementing a Poisson-Schrödinger solver. Doping is assumed to be only radially dependant. Special interest is taken to the relation between doping profile and capacitance-voltage characteristics. Good agreement with experimental data is achieved.